Apparatus for driving cell plate line of memory device using two

Static information storage and retrieval – Systems using particular element – Capacitors

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365226, 365145, G11C 1124

Patent

active

061011193

ABSTRACT:
An apparatus for driving a cell plate line of a semiconductor memory device having a plurality of memory cells, includes: a first driving means for driving the cell plate line with a first power supply voltage; a second driving means for driving the cell plate line with a second power supply voltage higher than the first power supply voltage; and a driving control means for enabling said second driving means for a predetermined time in order to activate the cell plate line in response to a control signal from an external circuit and enabling said first driving means after the predetermined time in order to stabilize said second driving means enables, wherein the control signal is employed to select one memory cell related to the cell plate line. Thereby, the apparatus can the high-speed operation of a ferroelectric random access memory (FeRAM) by using two power supply voltage sources.

REFERENCES:
patent: 5600587 (1997-02-01), Koike
patent: 5608667 (1997-03-01), Osawa
patent: 5671174 (1997-09-01), Koike et al.
patent: 6034884 (2000-03-01), Jung
patent: 6038162 (2000-03-01), Takata et al.

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