Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing
Patent
1996-12-03
1998-12-29
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
With means for measuring, testing, or sensing
117202, 117208, C30B 3500
Patent
active
058534792
ABSTRACT:
An image of the meniscus ring (21) between the crystal (20) and the melt (4) is formed by optical means (12, 24) on a sensor, the signals of which yield the actual value for the diameter of the crystal. Two optical measuring devices are provided, the optical paths of which are defined by base points on the meniscus ring (21) and two planes which are offset by 90.degree. to each other and which are parallel to the main axis of the crystal and in tangential contact with the meniscus ring (21). The two optical paths are preferably set up to intersect, their intersection being in the viewing window.
REFERENCES:
patent: 3692499 (1972-09-01), Aindrychuk
patent: 4634490 (1987-01-01), Tatsumij et al.
patent: 5240684 (1993-08-01), Baba et al.
patent: 5776787 (1993-01-01), Kawashima et al.
Patent Abstracts of Japan; JP 2-164789A filed Jun. 25, 1990; Appln No: JP 63-316224 filed Dec. 16, 1988; Assignee: Komatsu Denshi Kinzoku KK; Inventor: Yoshinobu Hiraishi; Title: Automatic Control Device for Diamete of Single Crystal.
Patent Abstracts of Japan; JP 57-179097A filed Nov. 4, 1982; Appln No: 56-63247 filed Apr. 28, 1981; Assignee: Tokyo Shibaura Denki KK; Inventor: Shinichirou Takasu; Title: Method and Apparatus for Growing Single Crystal .
Altekruger Burkhard
Aufreiter Joachim
Bruss Dieter
Balzers und Leybold
Garrett Felisa
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