Apparatus for directional low pressure chemical vapor deposition

Details Apparatus for directional low pressure chemical vapor deposition Apparatus for directional low pressure chemical vapor deposition

1992-09-30

1994-03-01

Chaudhuri, Olik

Coating apparatus

Gas or vapor deposition

118720, 118725, 4272481, 156613, 437 90, 437235, 437237, C23C 1600

Patent

active

052903583

ABSTRACT:
System and method for controlling the thickness profile of deposited thin film layers over three-dimensional topography are disclosed, wherein low pressure chemical vapor deposition conditions are employed with the reactant beam collimated and chosen to impinge at a specific angle onto the surface, such that the reactive sticking coefficient s.sub.r with the deposition surface is <1. Compared with conventional approaches, this method permits new shapes of the deposited thin film layer to be achieved over topography (such as trenches), including (i) tapered rather than re-entrant shapes (i.e., thicker at bottom rather than at top), (ii) enhanced sidewall and/or bottom coverage of trench structures (cf. the top surface), (iii) voidless, seamless filling of trench or via structures even at high aspect ratio (depth/width), and (iv) asymmetric sidewall coverage.

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