Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed
Patent
1999-03-30
1999-12-14
Picardat, Kevin M.
Semiconductor device manufacturing: process
With measuring or testing
Electrical characteristic sensed
438 14, 438190, 438238, 438382, H01L 2166
Patent
active
060016639
ABSTRACT:
An apparatus and method for detecting defect sizes in polysilicon and source-drain semiconductor devices and methods for making the same. Implemented is a double bridge test structure that includes a resistor path of first semiconductor material, such as doped silicon comprising a plurality of strip segments and with interconnection segments. A plurality of strips of second semiconductor material having a substantially lower resistivity are connected to form parallel circuit interconnections with the corresponding strip segments. The test structure is formed by masking techniques wherein a prescribed mask region enables portions of the silicon resistor or deposited polysilicon to be selectively silicided to form silicide and polycide, respectively. One embodiment for testing for defects in a polysilicon layer uses polycide as the low-resistivity strips, enabling the testing of open and short-circuit defects. A second embodiment selectively silicides exposed portions of a source-drain resistor, thereby enabling testing for defects in a source-drain layer of a metal oxide semiconductor. Defect sizes are determined by comparing the measured resistance values with predetermined width and spacings of the strips.
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Lin Yung-Tao
Ling Zhi-Min
Shiau Ying
Advanced Micro Devices , Inc.
Picardat Kevin M.
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