Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2011-04-19
2011-04-19
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S771000, C438S788000, C257SE21269
Reexamination Certificate
active
07927981
ABSTRACT:
A silicon-based thin film depositing apparatus, including a plurality of transparent electrodes disposed to face corresponding counter electrodes with a space therebetween. Subsequently, while injecting a raw material gas from raw material gas injection orifices toward the supporting electrodes and also injecting a barrier gas from barrier gas injection orifices in the same direction as the direction in which the raw material gas is injected, the gases are discharged from a gas outlet, and thereby, the pressure in a chamber is controlled to a pressure of more than 1 kPa. Then, a DC pulse voltage is applied to each counter electrode to deposit a silicon-based thin film. A DC pulse voltage is applied to perform discharge. Therefore, even in a state where the distance between the electrodes is increased, plasma can be generated efficiently, and the in-plane distribution of film thickness can be improved.
REFERENCES:
patent: 2002/0056415 (2002-05-01), Mashima et al.
patent: 2004/0161534 (2004-08-01), Saito et al.
patent: 2000-223424 (2000-08-01), None
Imaeda Minoru
Imanishi Yuichiro
Saito Takao
Burr & Brown
Ghyka Alexander G
NGK Insulators Ltd.
Nikmanesh Seahvosh J
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