Apparatus for depositing low stress films

Details Apparatus for depositing low stress films Apparatus for depositing low stress films

1994-11-16

1996-01-02

Nguyen, Nam

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

118665, C23C 1434

Patent

active

054805295

ABSTRACT:
X-ray masks are typically made by depositing and patterning a layer of heavy metal on a thin supporting membrane. The metal layer must have a relatively low stress to prevent stress-induced deformation of the pattern. Tungsten films having excellent stress characteristics are produced by employing a continuously operating capacitance-based measurement technique to allow adjustment of the deposition conditions in rapid response to changes in stress of the film being deposited.

REFERENCES:
patent: 4893071 (1990-01-01), Miller
Miller, "Feedback . . . Semiconductors", IEEE Transactions on electron devices, vol. Ed 19, No. 10, Oct. 1972, pp. 1103-1108.
Ku et al., "Use . . . masks", J. Vac. Sci. Technol. B6(6), Nov./Dec. 1988, pp. 2174-2177.

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