Apparatus for controlling the diameter of silicon single crystal

Details Apparatus for controlling the diameter of silicon single crystal Apparatus for controlling the diameter of silicon single crystal

1991-09-05

1992-11-17

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156600, 1566171, 1566181, 1566204, 422245, C30B 3500

Patent

active

051640392

ABSTRACT:
A method of controlling the diameter of a silicon single crystal. In the course of manufacturing a silicon single crystal by pulling the silicon single crystal while rotating it relative to a crucible, a comparison between a measured diameter value of the pulled single crystal measured by optical means and a desired diameter value is made to determine a deviation so that the resulting deviation is subjected to an incomplete differential PID processing or the Smith method processing to calculate a pull rate and the pull rate is applied to a motor controller of a crystal pulling apparatus thereby performing the diameter control of the pulled single crystal through the manipulation of the pull rate. An apparatus for controlling the diameter of a silicon single crystal includes input means for receiving a measured diameter value of a pulled single crystal measured by optical means, incomplete differential PID computing means for making a comparison between a measured diameter value of the pulled single crystal and a desired diameter value a plurality of times at intervals of a unit rotational period to calculate a pull rate, and output means for applying the pull rate to a motor controller of a crystal pulling apparatus.

REFERENCES:
patent: 4242589 (1980-12-01), Sachs
patent: 4539067 (1985-09-01), Washizuka et al.
patent: 4591994 (1986-05-01), Washizuka et al.

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