Apparatus for controlling I/O strobe signal in semiconductor...

Details Apparatus for controlling I/O strobe signal in semiconductor... Apparatus for controlling I/O strobe signal in semiconductor...

2011-07-12

2011-07-12

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S189020, C365S241000, C365S236000, C365S189040, C365S189050

Reexamination Certificate

active

07978553

ABSTRACT:
A sensing enable signal control circuit determines a driving timing of an I/O sense amplifier based on a read-out result of data, which is stored in a dummy cell of a semiconductor memory apparatus. The sensing enable signal control circuit in a semiconductor memory apparatus includes a detection code generating unit configured to output a detection code according to a voltage level of dummy cell data, which are read out from a dummy cell through at least one read operation, in response to a column select enable signal, and a multiplexer configured to receive the detection code and a default code and output a delay code to delay a sensing enable signal.

REFERENCES:
patent: 6009040 (1999-12-01), Choi et al.
patent: 2008/0008011 (2008-01-01), Moon et al.
patent: 2008/0205177 (2008-08-01), Kim et al.
patent: 01-276493 (1989-11-01), None
patent: 1020060022219 (2006-03-01), None
patent: 10-0655084 (2006-12-01), None

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