Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1996-02-20
1997-08-12
Nguyen, Nam
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
20429806, 118723EB, 118723FE, 118723HC, C23C 1650
Patent
active
056561415
ABSTRACT:
Apparatus for coating substrates 31, 31", . . . in a vacuum chamber 2 including a substrate carrier 30 disposed therein and a device 29 for generating a first plasma cloud 28 and, further, including magnets 26, 27 directing the plasma cloud 28 onto the surface of the substrates 31, 31" . . . wherein this device for generating the plasma cloud 28 has an election emitter 11 and a downstream tubular anode 38, the anode has an inlet 10 for the process gas to ignite the plasma and, further, the device is provided with magnets 4, 7 for directing and guiding the plasma through the anode tube 38 into the process chamber 43 and including a device for generating atoms, molecules or clusters of the materials for producing a layer on the substrates 31, 31", . . . , preferably an electron beam evaporator 37 from which the evaporated or sputtered material 33 can be directly applied onto the substrates 31, 31" . . . . A second plasma 60 is generated between the crucible 45 of the electron beam evaporator 37 and the anode tube 38 of the plasma source 29 by applying a potential difference between the plasma source 29 and the vacuum chamber 2.
REFERENCES:
patent: 3437734 (1969-04-01), Roman et al.
patent: 4863581 (1989-09-01), Inokuti et al.
patent: 4868003 (1989-09-01), Temple et al.
patent: 4885070 (1989-12-01), Campbell et al.
patent: 4941430 (1990-07-01), Watanabe et al.
IBM Technical Disclosure Bulletin vol. 26 No. 11 Apr. 1984 pp. 6154-6155.
Betz Hans-Georg
Campbell Gregor A.
Conn Robert W.
Goebel Dan M.
Matl Karl
Leybold Aktiengesellschaft
Nguyen Nam
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