Apparatus for chemical vapor deposition

Coating apparatus – Gas or vapor deposition – With treating means

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Details

118730, 118 501, C23C 1600

Patent

active

052445011

ABSTRACT:
An apparatus for a chemical vapor deposition in which at least one substrate which has partially an insulating film on the surface thereof is disposed in a pressure reduced reaction chamber, the reaction chamber is provided with a nozzle for feeding a reactive gas into the reaction chamber, and a light source is provided for emitting a light beam to heat the substrate. The combination of substrate heating source using infrared rays and a laminarized jet of reactive gas is utilized for maintaining the selectivity, facilitating the thin film forming reaction, and improving the high reproducibility and controllability.

REFERENCES:
patent: 4540466 (1985-09-01), Nishizawa
patent: 4653428 (1987-03-01), Wilson et al.
patent: 4857139 (1989-08-01), Tashiro et al.

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