Apparatus for chemical vapor deposition

Details Apparatus for chemical vapor deposition Apparatus for chemical vapor deposition

1987-07-24

1990-05-15

Lawrence, Evan

Coating apparatus

Gas or vapor deposition

With treating means

118 501, 118730, C23C 1646, C23C 1652

Patent

active

049248073

ABSTRACT:
An apparatus for a chemical vapor deposition in which at least one substrate which has partially an insulating film on the surface thereof is disposed in a pressure reduced reaction chamber, the reaction chamber is provided with a nozzle for feeding a reactive gas into the reaction chamber, and a light source is provided for emitting a light beam to heat the substrate. The apparatus has provision for feeding a second gas opposite the substrate to put the reactive gas in the vicinity of the substrate surface into laminar flow. The combination of substrate heating source using infrared rays and the laminarized jet of reactive gas is utilized for maintaining the selectivity, facilitating the thin film forming reaction, and obtaining improved high reproducibility and controllability.

REFERENCES:
patent: 3939798 (1976-02-01), Morton
patent: 4496609 (1985-01-01), McNeilly et al.
patent: 4558660 (1985-12-01), Nishizawa et al.
patent: 4653428 (1987-03-01), Wilson et al.

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