Apparatus for asymmetrically contouring the thickness of sputter

Details Apparatus for asymmetrically contouring the thickness of sputter Apparatus for asymmetrically contouring the thickness of sputter

1981-11-27

1983-11-22

Weisstuch, Aaron

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

118504, 118720, 204192R, C23C 1500

Patent

active

044167601

ABSTRACT:
Apparatus for compensating for asymmetric signatures in semiconductor processes. An asymmetric thickness profile is obtained in a sputter coating system by using a shield placed in an asymmetric position with respect to the center of a symmetric sputtering system such as a circularly symmetric sputtering system. A sputter coated layer is obtained which has the asymmetric character of the shield and its placement. When the substrate is placed in subsequent equipment having asymmetric etch characteristics, the resultant film has a uniform thickness or a known contour.

REFERENCES:
patent: 3904503 (1975-09-01), Hanemann
patent: 4303489 (1981-12-01), Morrison, Jr.
patent: 4315960 (1982-02-01), Ohji et al.
patent: 4342901 (1982-08-01), Zajac

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