Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into...
Reexamination Certificate
2008-09-17
2011-12-13
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
C438S509000, C438S535000, C257SE21170, C257SE21051, C257SE21134, C257SE21328, C257SE21347
Reexamination Certificate
active
08076226
ABSTRACT:
An apparatus for annealing a substrate includes a substrate stage having a substrate mounting portion configured to mount the substrate; a heat source having a plurality of heaters disposed under the substrate mounting portion, the heaters individually preheating a plurality areas defined laterally in the substrate through a bottom surface of the substrate; and a light source facing a top surface of the substrate, configured to irradiate a pulsed light at a pulse width of about 0.1 ms to about 100 ms on the entire top surface of the substrate.
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Notification of Reasons for Refusal issued by the Japanese Patent Office on Jun. 14, 2011, for Japanese Patent Application No. 2005-188209, and English-language translation thereof.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Nhu David
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