Apparatus for and method of forming thin film

Details Apparatus for and method of forming thin film Apparatus for and method of forming thin film

1992-06-02

1993-05-18

Bueker, Richard

Coating processes

Direct application of electrical, magnetic, wave, or...

Ion plating or implantation

20429805, 118723, 118726, C23C 1432

Patent

active

052119947

ABSTRACT:
A thin film forming apparatus has an evaporation source for emitting a cluster beam, an ionizing device for irradiating the cluster beam from the evaporation source with thermal electrons, thereby forming cluster ions, an accelerating device for accelerating the cluster ions so as to irradiate a substrate with the cluster ions together with neutral clusters, and cluster ion rate control device for periodically varying the rate of irradiation of the substrate with the cluster ions at a period which is longer than the time required for the cluster ions to reach the substrate from the ionizing device and which is shorter than the time required for forming a mono-atom or mono-molecular layer on the substrate, thereby controlling the time-mean of the rate of irradiation with the cluster ions.

REFERENCES:
patent: 4811690 (1989-03-01), Kawagoe et al.
patent: 4812326 (1989-03-01), Tsukazaki et al.
patent: 5099791 (1992-03-01), Tsukazaki
patent: 5100526 (1992-03-01), Ito
A. Ueda et al., "Mass Analysis of Vaporized Metal Clusters By Time-Of-Flight Method", Proceedings of the Ninth Symposium on Ion Sources and Ion-Assisted Technology, Jun. 3-5, 1985, Tokyo, Japan, pp. 45-50.
S. Yasunaga et al., "New Type Ionized Beam Source", 6th International Conference Ion & Plasma Assisted Techniques, May 1987, Brighton, UK, pp. 13-16.

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