Apparatus for adjusting initial position of melt surface

Chemical apparatus and process disinfecting – deodorizing – preser – Chemical reactor – Including specific material of construction

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156601, 156608, 1566171, 422248, C30B 1570, C30B 1530, C30B 1500, C30B 1526

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active

049157752

ABSTRACT:
A melt-surface initial position adjusting apparatus which is suitable for use in a monocrystal growing system employing the Czochralski method to adjust the vertical position of the melt surface before the growing of a monocrystal. The apparatus can ensure a highly precise measurement of a crystal-diameter measuring device, thereby enabling a reduction in the costs of producing a monocrystal bar. Before the growing of a crystal, the vertical position (H) of the surface (16A) of a melt within a crucible is measured. The crucible is moved vertically on the basis of the measured value in such a manner as to maintain the distance (L) between the melt surface (16A) and an image sensor (28) for measuring the crystal diameter at a predetermined value.

REFERENCES:
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patent: 3998598 (1976-12-01), Bonora
patent: 4207293 (1980-06-01), Scholl et al.
patent: 4428783 (1984-01-01), Gessert
patent: 4512954 (1985-04-01), Matsui
patent: 4794263 (1988-12-01), Katsuoka et al.
Toshiba, "System for Pulling Up Single Crystal", Patent Abstracts of Japan, vol. 11, No. 297, (Sep. 25, 1987).
Fujitsu, "Single Crystal Growing Apparatus", Patent Abstracts of Japan, vol. 8, No. 134, (Jun. 21, 1984).
Toshiba, "Apparatus for Preparing Single Crystal", Patent Abstracts of Japan, vol. 9, No. 134, (Jun. 8, 1985).
Toshiba, "Manufacture of Single Crystal", Patent Abstracts of Japan, vol. 9, No. 171, (Jul. 16, 1985).

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