Apparatus and methods relating to ion implantation and heat tran

Details Apparatus and methods relating to ion implantation and heat tran Apparatus and methods relating to ion implantation and heat tran

1990-10-03

1992-06-23

Anderson, Bruce C.

Radiant energy

Inspection of solids or liquids by charged particles

Analyte supports

2504431, 2504922, G01N 2102, G21K 510, H01J 3730

Patent

active

051245574

ABSTRACT:
Apparatus for presenting target elements (16) such as semi-conductor wafers to an ion beam (13) for ion implantation comprises a support rotor (19) for carrying the targets (16) on support bases (21) mounted on arms (22) extending radially from a core structure (20) of the rotor. The target elements (16) are rotated by the rotor (19) through the ion beam to produce scanning across the target elements. Each support base (21) is rotatable about the radial axis of its support arm. The rotation of the base (21) allows adjustment of the ion implantation angle. The implantation normally takes place with the target vertical and the axis of scanning rotation horizontal. Each support base (21) is also rotatable through 90.degree. to allow loading and unloading of target elements while the support base is horizontal. Good thermal contact is made between the target element and the support base by an intervening sheet having upstanding flaps (61) which are urged outwardly into contact with the element (16) by the effect of centrifugal force.

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patent: 5030835 (1991-07-01), Tamcin et al.
D. Aitken, "The Design Philosophy For A 200 kV Industrial High Current Ion Implanter", Nuclear Instruments and Methods 139 (1976) 125-134.
H. M. B. Bird, et al., "PR-200 Ion Implantation System"; J. Vac. Scl. Technol., vol. 15, No. 3, May/Jun. 1978, pp. 1080-1085.

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