Apparatus and methods for two-dimensional ion beam profiling

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

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C250S492200

Reexamination Certificate

active

07109499

ABSTRACT:
Methods and apparatus are provided for measuring a profile of an ion beam. The apparatus includes an array of beam current sensors, each producing a sensor signal in response to incident ions of the ion beam, a translation mechanism configured to translate the array of beam current sensors along a translation path with respect to the ion beam, and a controller configured to acquire the sensor signals produced by the beam current sensors at a plurality of positions along the translation path, wherein the acquired sensor signals are representative of a two-dimensional profile of the ion beam.

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E.P. Eernisse et al., “Ion Beam Profile Monitor”, Rev. Sci. Instrum., vol. 46, No. 3, Mar. 1975 pp. 266-268.

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