Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2006-09-19
2006-09-19
Nguyen, Kiet T. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492200
Reexamination Certificate
active
07109499
ABSTRACT:
Methods and apparatus are provided for measuring a profile of an ion beam. The apparatus includes an array of beam current sensors, each producing a sensor signal in response to incident ions of the ion beam, a translation mechanism configured to translate the array of beam current sensors along a translation path with respect to the ion beam, and a controller configured to acquire the sensor signals produced by the beam current sensors at a plurality of positions along the translation path, wherein the acquired sensor signals are representative of a two-dimensional profile of the ion beam.
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Angel Gordon C.
MacIntosh Edward D.
Schaefer Thomas A.
Leybourne James J.
Nguyen Kiet T.
Varian Semiconductor Equipment Associates Inc.
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