Apparatus and methods for selective removal of material from...

Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching

Reexamination Certificate

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C438S745000, C438S750000, C156S345110

Reexamination Certificate

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08053371

ABSTRACT:
A process and apparatus for locally removing any material, such as a refractory metal, in particular tungsten, from any desired area of a wafer, such as an alignment mark area of a silicon wafer in process during the formation of integrated circuits thereon.

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Patent Abstract of Japan for 09-027482 published Jan. 1997.

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