Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-05-30
2010-12-28
Potter, Roy K (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S361000, C257SE27112
Reexamination Certificate
active
07859056
ABSTRACT:
An integrated circuit (IC) includes one or more silicon-on-insulator (SOI) transistors. Each SOI transistor includes a first source region, a second source region, a drain region, a body contact region, a gate, and first and second isolation regions. The body contact region couples electrically to a body of the SOI transistor. The gate controls current flow between the first and second source regions and a drain region of the transistor. The first isolation region is disposed between the first source region and the body contact region. The second isolation region is disposed between the second source region and the body contact region.
REFERENCES:
patent: 5821587 (1998-10-01), Jeong
Liang Minchang
Liu Yowjuang W.
Altera Corporation
Law Offices of Maximilian R. Peterson
Potter Roy K
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