Apparatus and methods for integrated circuit with devices...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S501000, C257SE29018, C257SE21426, C257SE21564

Reexamination Certificate

active

11180890

ABSTRACT:
An integrated circuit (IC) includes one or more silicon-on-insulator (SOI) transistors. Each SOI transistor includes a first source region, a second source region, a drain region, a body contact region, a gate, and first and second isolation regions. The body contact region couples electrically to a body of the SOI transistor. The gate controls current flow between the first and second source regions and a drain region of the transistor. The first isolation region is disposed between the first source region and the body contact region. The second isolation region is disposed between the second source region and the body contact region.

REFERENCES:
patent: 6914306 (2005-07-01), Marr

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