Apparatus and methods for integrated circuit with devices...

Details Apparatus and methods for integrated circuit with devices... Apparatus and methods for integrated circuit with devices...

2005-09-06

2005-09-06

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257S347000

Reexamination Certificate

active

06939752

ABSTRACT:
An integrated circuit (IC) includes one or more silicon-on-insulator (SOI) transistors. Each SOI transistor includes a first source region, a second source region, a drain region, a body contact region, a gate, and first and second isolation regions. The body contact region couples electrically to a body of the SOI transistor. The gate controls current flow between the first and second source regions and a drain region of the transistor. The first isolation region is disposed between the first source region and the body contact region. The second isolation region is disposed between the second source region and the body contact region.

REFERENCES:
patent: 6537861 (2003-03-01), Kroell et al.
patent: 6638799 (2003-10-01), Kotani
patent: 6867083 (2005-03-01), Imam et al.

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