Apparatus and methods for encapsulating...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive

Reexamination Certificate

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C257S415000, C257SE21002

Reexamination Certificate

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07344907

ABSTRACT:
Apparatus and methods are provided for enabling wafer-scale encapsulation of microelectromechanical (MEM) devices (e.g., resonators, filters) to protect the MEMs from the ambient and to provide either a controlled ambient or a reduced pressure. In particular, methods for wafer-scale encapsulation of MEM devices are provided, which enable encapsulation of MEM devices under desired ambient conditions that are not determined by the deposition conditions of a sealing process in which MEM release via holes are sealed or pinched-off, and which prevent sealing material from being inadvertently deposited on the MEM device during the sealing process.

REFERENCES:
patent: 6052287 (2000-04-01), Palmer et al.
patent: 6884650 (2005-04-01), Lee et al.
patent: 6930367 (2005-08-01), Lutz et al.
patent: 6936494 (2005-08-01), Cheung
patent: 2001/0004085 (2001-06-01), Gueissaz
patent: 2001/0013653 (2001-08-01), Shoji
patent: 2003/0001251 (2003-01-01), Cheever et al.
patent: 2005/0082654 (2005-04-01), Humpston et al.
patent: 2005/0167795 (2005-08-01), Higashi

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