Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2005-05-10
2005-05-10
Auduong, Gene N. (Department: 2818)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S226000, C365S189011, C327S536000
Reexamination Certificate
active
06891764
ABSTRACT:
Briefly, in accordance with an embodiment of the invention, a single charge pump is discussed that may provide a read voltage having a tolerance of less than about ±200 millivolts (mV) at an output terminal of the single charge pump. The output terminal of the single charge pump may be coupled to a flash memory to couple the read voltage to the memory to read information stored in the memory.
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U.S. Appl. No. 10/187,219, filed Jun. 28, 2002, to Bo Li, pending.
Auduong Gene N.
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
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