Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Reexamination Certificate
2006-03-28
2006-03-28
Barreca, Nicole (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
C430S314000, C430S950000
Reexamination Certificate
active
07018779
ABSTRACT:
A process for prohibiting amino group transport from the top surface of a layered semiconductor wafer to a photoresist layer introduces a thin film oxynitride over the silicon nitride layer using a high temperature step of nitrous oxide (N2O) plus oxygen (O2) at approximately 300° C. for about 50 to 120 seconds. By oxidizing the silicon nitride layer, the roughness resulting from the adverse affects of amino group transport eliminated. Moreover, this high temperature step, non-plasma process can be used with the more advanced 193 nanometer technology, and is not limited to the 248 nanometer technology. A second method for exposing the silicon nitride layer to an oxidizing ambient, prior to the application of antireflective coating, introduces a mixture of N2H2and oxygen (O2) ash at a temperature greater than or equal to 250° C. for approximately six minutes. This is followed by an O2plasma clean and/or an Ozone clean, and then the subsequent layering of the ARC and photoresist.
REFERENCES:
patent: 4419813 (1983-12-01), Iwai
patent: 4641033 (1987-02-01), Petelin et al.
patent: 4825277 (1989-04-01), Mattox et al.
patent: 5580701 (1996-12-01), Lur et al.
patent: 6153467 (2000-11-01), Wu
patent: 6323310 (2001-11-01), Puligadda et al.
patent: 6331479 (2001-12-01), Li et al.
patent: 6743700 (2004-06-01), Asami et al.
patent: 2003/0017670 (2003-01-01), Luoh et al.
Derwent Abstract of TW 441002, “Metal interconnect production comprises forming dielectric layer on sustrate having copper wire, and forming contact opening and trench in dielectric layer to expose surface of cooper wire”, Chen et al., Jun. 2001.
Li Wai-kin
Malik Rajeev
Mezzapelle Joseph J.
Barreca Nicole
C. Li Todd M.
Curcio Robert
DeLio & Peterson LLC
International Business Machines - Corporation
LandOfFree
Apparatus and method to improve resist line roughness in... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus and method to improve resist line roughness in..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and method to improve resist line roughness in... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3602592