Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Patent
1997-11-12
2000-04-18
Dang, Thi
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
438729, 438732, 118723I, 118723IR, 156345, H05H 100
Patent
active
060511516
ABSTRACT:
An apparatus and method of producing a negative ion plasma for use in manufacturing of microelectronic devices, particularly etching of microelectronic patterns in semiconductor wafers. A negative ion plasma is produced from a hot electron plasma formed by a RF or UHF plasma source. The negative ion plasma includes positive ions, negative ions and relatively cold electrons, such electrons having an effective electron temperature or average energies less than that for maintaining the plasma. The fields producing the hot plasma are isolated from the negative ion plasma in a cold plasma region by a magnetic filter. The magnetic filter confines the plasmas to provide plasma uniformity at a work piece being etched by the negative ion plasma. The magnetic filter further prevents hot electrons originating in the hot electron plasma from diffusing into the negative ion plasma, while allowing positive ions and cold electrons to diffuse from the hot plasma to the negative ion plasma. An RF bias on the work piece accelerates the positive ions, electrons and/or negative ions to the work piece being etched.
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Coultas Dennis K.
Keller John H.
Anderson Jay
Dang Thi
International Business Machines - Corporation
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