Apparatus and method of producing a negative ion plasma

Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438729, 438732, 118723I, 118723IR, 156345, H05H 100

Patent

active

060511516

ABSTRACT:
An apparatus and method of producing a negative ion plasma for use in manufacturing of microelectronic devices, particularly etching of microelectronic patterns in semiconductor wafers. A negative ion plasma is produced from a hot electron plasma formed by a RF or UHF plasma source. The negative ion plasma includes positive ions, negative ions and relatively cold electrons, such electrons having an effective electron temperature or average energies less than that for maintaining the plasma. The fields producing the hot plasma are isolated from the negative ion plasma in a cold plasma region by a magnetic filter. The magnetic filter confines the plasmas to provide plasma uniformity at a work piece being etched by the negative ion plasma. The magnetic filter further prevents hot electrons originating in the hot electron plasma from diffusing into the negative ion plasma, while allowing positive ions and cold electrons to diffuse from the hot plasma to the negative ion plasma. An RF bias on the work piece accelerates the positive ions, electrons and/or negative ions to the work piece being etched.

REFERENCES:
patent: 4842707 (1989-06-01), Kinoshita
patent: 5444207 (1995-08-01), Sekine et al.
patent: 5556521 (1996-09-01), Ghanbari
O. Fukuma et al..; "Relationship Between Extraction of H-Ions Optimized by Plasma Grid Potential & Plasma Parameters in a Bucket Source"; Rev. Sci. Instrum. 63 (4); Apr., 1992; pp. 2696-2698.
M. Hanada et al.; "114cm X 36cm vol. Negative Ion Source Producing Multi-Ampere Ion Beams"; Rev. Sci. Instrum. 61 (1), Jan., 1990; pp. 499-501.
Y. Yoshida; "Reduction of Charge-Up Damage in Magnetron RIE"; Electrochemical Society Proceedings; vol. 95-5; pp. 236-245.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Apparatus and method of producing a negative ion plasma does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus and method of producing a negative ion plasma, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and method of producing a negative ion plasma will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2333954

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.