Apparatus and method of measuring defects in an ion...

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

Reexamination Certificate

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C324S1540PB

Reexamination Certificate

active

07403023

ABSTRACT:
The invention relates to the use of the metrology methods and the related apparatus disclosed herein that incorporate thermal treatment devices and methods that improve defect detection. Specifically, in one aspect the invention relates to method of thermally treating a semiconductor wafer such that an acceleration of interstitial defect migration is achieved while leaving vacancy defects substantially unaltered.

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International Search Report and the Written Opinion of the International Searching Authority for International Application No. PCT/US2006/009343 mailed Feb. 20, 2007.

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