Apparatus and method of manufacturing semiconductor element

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438513, 438162, H01L 21265, H01L 21786

Patent

active

059769190

ABSTRACT:
A large area semiconductor element can be manufactured with high productivity, which has low electric resistance at the boundary face of a metal and a semiconductor and has excellent characteristics and reliability. A manufacturing apparatus comprises an ion irradiation means for simultaneously irradiating hydrogen ions and ions containing an element serving as a dopant of a semiconductor to a semiconductor film or a substrate in an atmosphere under reduced pressure, and a film forming means which forms a thin film or a heat treatment means which conducts a heat treatment without exposing a sample to an air. When a sample having an a-Si:H thin film is brought into a sample preparation chamber by opening a gate valve, the chamber is exhausted to have the inside pressure of 10.sup.2 to 10.sup.-3 Pa. Then, the sample is forwarded to an ion irradiation chamber from the sample preparation chamber via an intermediate chamber of which the pressure is maintained in the range of 10.sup.-3 to 10.sup.-7 Pa, and ions such as phosphous are irradiated. After the ion irradiation, a gate valve is opened to transfer the sample to the intermediate chamber, and then a gate valve is opened to forward the sample to a deposition chamber. Subsequently, Ar gas is let in to the deposition chamber and a metal film of Al/Ti is deposited by a sputtering method. After the deposition, the sample is forwarded to a sample carry-out chamber via the intermediate chamber.

REFERENCES:
patent: 4951601 (1990-08-01), Maydan et al.
patent: 5141885 (1992-08-01), Yoshida et al.
patent: 5252499 (1993-10-01), Rothchild
patent: 5282899 (1994-02-01), Balmashnov et al.
patent: 5324684 (1994-06-01), Kermani et al.
patent: 5397718 (1995-03-01), Furuta et al.
patent: 5403756 (1995-04-01), Yoshinouchi et al.
patent: 5404894 (1995-04-01), Shiraiwa
patent: 5424244 (1995-06-01), Zhang et al.
patent: 5504020 (1996-04-01), Aomori et al.
patent: 5543336 (1996-08-01), Enami et al.
patent: 5567633 (1996-10-01), Gosain et al.
patent: 5576229 (1996-11-01), Muruta et al.
patent: 5804471 (1998-09-01), Yamazaki et al.
Yoshida et al, "Fabrication of a-Si:H Thin Film Transistors on 4-inch Glass Substrates by a Large Area Ion Doping Technique", Japanses Journal of Applied Physics, vol. 30, No. 1A, Jan. 1991, pp. L67-L69.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Apparatus and method of manufacturing semiconductor element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus and method of manufacturing semiconductor element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and method of manufacturing semiconductor element will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2134162

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.