Apparatus and method of manufacturing semiconductor element

Details Apparatus and method of manufacturing semiconductor element Apparatus and method of manufacturing semiconductor element

1997-08-01

1999-11-02

Mulpuri, Savitri

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438513, 438162, H01L 21265, H01L 21786

Patent

active

059769190

ABSTRACT:
A large area semiconductor element can be manufactured with high productivity, which has low electric resistance at the boundary face of a metal and a semiconductor and has excellent characteristics and reliability. A manufacturing apparatus comprises an ion irradiation means for simultaneously irradiating hydrogen ions and ions containing an element serving as a dopant of a semiconductor to a semiconductor film or a substrate in an atmosphere under reduced pressure, and a film forming means which forms a thin film or a heat treatment means which conducts a heat treatment without exposing a sample to an air. When a sample having an a-Si:H thin film is brought into a sample preparation chamber by opening a gate valve, the chamber is exhausted to have the inside pressure of 10.sup.2 to 10.sup.-3 Pa. Then, the sample is forwarded to an ion irradiation chamber from the sample preparation chamber via an intermediate chamber of which the pressure is maintained in the range of 10.sup.-3 to 10.sup.-7 Pa, and ions such as phosphous are irradiated. After the ion irradiation, a gate valve is opened to transfer the sample to the intermediate chamber, and then a gate valve is opened to forward the sample to a deposition chamber. Subsequently, Ar gas is let in to the deposition chamber and a metal film of Al/Ti is deposited by a sputtering method. After the deposition, the sample is forwarded to a sample carry-out chamber via the intermediate chamber.

REFERENCES:
patent: 4951601 (1990-08-01), Maydan et al.
patent: 5141885 (1992-08-01), Yoshida et al.
patent: 5252499 (1993-10-01), Rothchild
patent: 5282899 (1994-02-01), Balmashnov et al.
patent: 5324684 (1994-06-01), Kermani et al.
patent: 5397718 (1995-03-01), Furuta et al.
patent: 5403756 (1995-04-01), Yoshinouchi et al.
patent: 5404894 (1995-04-01), Shiraiwa
patent: 5424244 (1995-06-01), Zhang et al.
patent: 5504020 (1996-04-01), Aomori et al.
patent: 5543336 (1996-08-01), Enami et al.
patent: 5567633 (1996-10-01), Gosain et al.
patent: 5576229 (1996-11-01), Muruta et al.
patent: 5804471 (1998-09-01), Yamazaki et al.
Yoshida et al, "Fabrication of a-Si:H Thin Film Transistors on 4-inch Glass Substrates by a Large Area Ion Doping Technique", Japanses Journal of Applied Physics, vol. 30, No. 1A, Jan. 1991, pp. L67-L69.

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