Apparatus and method of manufacture for integrated circuit...

Details Apparatus and method of manufacture for integrated circuit... Apparatus and method of manufacture for integrated circuit...

2006-09-20

2008-08-05

Coleman, W. David (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE23118

Reexamination Certificate

active

07408227

ABSTRACT:
An integrated circuit, or portion thereof, such as a CMOS device, includes an epitaxially grown dielectric on a silicon carbide base. The epitaxially grown dielectric forms a gate dielectric and the silicon carbide base serves as a channel region for the CMOS device. In various embodiments, the epitaxially grown dielectric may be a crystalline carbon or carbon-containing film.

REFERENCES:
patent: 6437371 (2002-08-01), Lipkin et al.

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