Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-12-13
1999-01-26
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257 57, 257347, 257537, H01L 2976, H01L 2994, H01L 31062, H01L 3143
Patent
active
058641629
ABSTRACT:
A thin silicon layer transistor integrated with a resistor. The resistor is self-aligned and contiguous with the transistor and is also formed of the same thin silicon layer as the transistor. This structure is particularly suitable for an SRAM circuit in order to simplify processing steps and to conserve area on SOS designs.
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"Scaled Channel Length
Burgener Mark L.
Reedy Ronald E.
Haynes Mark A.
Meier Stephen
Peregrine Seimconductor Corporation
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