Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1992-02-18
1994-11-15
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 31, 117217, C30B 1510
Patent
active
053637968
ABSTRACT:
An apparatus for growing a single crystal having a crucible, two heaters arranged at the outside of the crucible and along the vertical direction, a heat shield placed at the outside of the heaters, a radiation shield for shielding the single crystal from the radiation heat, and an upper heat shield for preventing the upward heat, transfer of the heaters. In the apparatus, a melted layer and solid layer of raw material are formed in the upper and lower portions of the crucible, respectively. While melting the solid layer, the single crystal is pulled up. The lower portion of the heat shield is thinner than the upper portion. The ratio of the height to the diameter of the crucible is 0.85 or more. The melting amount of the solid layer is controlled in the pulling process according to the non-segregation condition in the variable-thickness melted layer method. The oxygen concentration of the pulled single crystal is controlled in the pulling process by adjusting the rotation speed and rotation direction of the crucible.
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Fujiwara Hideki
Fujiwara Toshiyuki
Inami Shuichi
Kobayashi Sumio
Kubo Takayuki
Kunemund Robert
Sumitomo Metal Industries Ltd.
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