Apparatus and method of fabricating thin film transistor...

Semiconductor device manufacturing: process – Chemical etching – Combined with coating step

Reexamination Certificate

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C257SE21441, C438S158000

Reexamination Certificate

active

07811937

ABSTRACT:
The present invention relates to an apparatus and a method of fabricating a thin film transistor array substrate. The apparatus includes a dip strip component for stripping a photo-resist pattern and a thin film formed on a substrate by using a stripper; a removing part for removing residual photo-resist and thin film from the substrate; and a jet strip component for jetting the stripper to remove residual particles of photo-resist and thin film left on the substrate. The method of fabricating includes dipping a substrate in a stripper, wherein the substrate has a photo-resist pattern and a thin film, the thin film being formed on an entire surface of the substrate so as to cover the photo-resist pattern; removing residual photo-resist and thin film using the stripper; and removing particles of residual photo-resist and thin film left on the substrate.

REFERENCES:
patent: 5570660 (1996-11-01), Vandenberg
patent: 6008877 (1999-12-01), Akiyama et al.
patent: 2001/0028071 (2001-10-01), Yoo et al.
patent: 2002/0092548 (2002-07-01), Park
patent: 2003/0085195 (2003-05-01), Lee et al.
patent: 2003/0111098 (2003-06-01), Kim
patent: 2003/0117539 (2003-06-01), Hwang et al.
patent: 2004/0114652 (2004-06-01), Yoshikawa
patent: 10-0230625 (1999-08-01), None
patent: 10-2003-00268222 (2003-03-01), None

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