Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2006-12-14
2009-06-23
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S189090
Reexamination Certificate
active
07551504
ABSTRACT:
An apparatus for detecting a refresh period of a semiconductor memory includes a signal generating unit that generates a plurality of signal pairs, each of which includes one among a plurality of first reference signals that are respectively generated with the same timing as first to (N−1)-th pulses of a refresh period signal of order N, and one among a plurality of second reference signals that correspond to the plurality of first reference signals and are respectively generated with the same timing as second to N-th pulses of the refresh period signal. A refresh period detecting unit detects the period of the refresh period signal using one among the plurality of signal pairs.
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Hynix / Semiconductor Inc.
Kaminski Jeffri A.
Nguyen Tuan T.
Venable LLP
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