Static information storage and retrieval – Systems using particular element – Amorphous
Reexamination Certificate
2011-04-05
2011-04-05
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Systems using particular element
Amorphous
C365S189160, C365S189070, C365S190000
Reexamination Certificate
active
07920413
ABSTRACT:
Provided are an apparatus and method for writing data to a phase-change random access memory (PRAM) by using writing power calculation and data inversion functions, and more particularly, an apparatus and method for writing data which can minimize power consumption by calculating the power consumed while input original data or inverted data is written to a PRAM and storing the data consuming less power. A PRAM consumes a significant amount of power in order to store data in a memory cell since a large electric current is required to flow for a long period of time. According to the present invention, since the PRAM consumes different amounts of power when writing data with a value of 0 and data with a value of 1, the power consumed when input original data is stored and the power consumed when the input original data is inverted and stored are compared to each other, the data with a smaller power consumption is stored when the data is written to the PRAM as a word unit, and thus the power consumption of the PRAM can be reduced.
REFERENCES:
patent: 6999371 (2006-02-01), Nii
patent: 7106621 (2006-09-01), Frey
patent: 7170812 (2007-01-01), Nii
patent: 7242605 (2007-07-01), Choi et al.
patent: 7391643 (2008-06-01), Fuji
patent: 7525864 (2009-04-01), Brown
patent: 2006/0242495 (2006-10-01), Choi
patent: 10-2000-0007798 (2000-02-01), None
patent: 10-2005-0051135 (2005-06-01), None
patent: 10-2006-0082510 (2006-07-01), None
Byung-Rok Oh, et al., “Enhanced Write Performance of a 64-Mb Phase-Change Random Access Memory”, IEEE Journal of Solid-State Circuits, vol. 41, No. 1, Jan. 2006, pp. 122-126.
Woo Yeong Cho, et al., “A 0.18-um 3.0-V 64-Mb Nonvolatile Phase-Transition Random Access Memory (PRAM)”, IEEE Journal of Solid State Circuits, vol. 40, No. 1, Jan. 2005, pp. 293-300.
Lee Nam Yeal
Lee Seung-Yun
Park Young Sam
Yang Byung-Do
Yoon Sung-Min
Cungbuk Nat'l Univ. Industry Academic Cooperation Foundation
Electronics & Telecommunications Research Institute
Kile Park Goekjian Reed & McManus PLLC
Nguyen Vanthu
LandOfFree
Apparatus and method for writing data to phase-change memory... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus and method for writing data to phase-change memory..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and method for writing data to phase-change memory... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2675084