Radiant energy – Inspection of solids or liquids by charged particles – Electron probe type
Reexamination Certificate
2011-07-19
2011-07-19
Johnston, Phillip A (Department: 2881)
Radiant energy
Inspection of solids or liquids by charged particles
Electron probe type
C250S311000, C324S754120
Reexamination Certificate
active
07982188
ABSTRACT:
An electric field for decelerating an electron beam is formed on a surface of a sample semiconductor to be inspected, an electron beam having a specific area (a sheet electron beam) and containing a component having such an energy as not to reach the surface of the sample semiconductor is reflected in the very vicinity of the surface of the sample semiconductor by action of the electric field for deceleration and then forms an image through an imaging lens. Thus images of plural fields on the surface of the sample semiconductor are obtained and are stored in image memory units. By comparing the stored images of the plural fields with one another, the presence and position of a defect in the fields are determined.
REFERENCES:
patent: 3714425 (1973-01-01), Someya et al.
patent: 4978855 (1990-12-01), Liebl et al.
patent: 6091249 (2000-07-01), Talbot et al.
patent: 6198095 (2001-03-01), Staib
patent: 6232787 (2001-05-01), Lo et al.
patent: 6429427 (2002-08-01), Frosien
patent: 6610980 (2003-08-01), Veneklasen et al.
patent: 7019484 (2006-03-01), Takemori et al.
patent: 7022986 (2006-04-01), Shinada et al.
patent: 7109484 (2006-09-01), Nakasuji et al.
patent: 2002/0028399 (2002-03-01), Nakasuji et al.
patent: 2002/0088940 (2002-07-01), Watanabe et al.
patent: 2002/0148975 (2002-10-01), Kimba et al.
patent: 59-192943 (1983-04-01), None
patent: 5-109379 (1991-10-01), None
patent: 5-258703 (1992-05-01), None
patent: 7-249393 (1994-03-01), None
patent: 9-270242 (1996-04-01), None
patent: 10-97837 (1996-09-01), None
patent: 9-171793 (1996-11-01), None
patent: 10-197462 (1997-01-01), None
patent: 11-108864 (1997-10-01), None
patent: 2000-340160 (1999-05-01), None
patent: 2001-210264 (2000-01-01), None
patent: 2002-093359 (2000-09-01), None
P. Sandland, W.D. Meisburger, D.J. Clark, R.R. Simmons, D.E.A. Smith, L.H. Veneklasen, B.G. Becker, A.D. Brodie, C.H. Chadwick, Z.W. Chen, L.S. Chuu, S.G. Lele, M.Y. Ling, J.E. McMurtry, R.E. Paul, C.S. Pan, M. Robinson, J.K.H. Rough, J. Taylor, P.A. Wieczorek and S.C. Wong, “An electron-beam inspection system for x-ray mask production”, J.Vac. Sci. Technol. B9(6), American Vacuum Society, 1991, pp. 3005-3009.
W.D. Meisburger, A.D. Brodie and A.A. Desai, “Low-voltage electron-optical system for the high-speed inspection of integrated circuits”, J.Vac. Sci. Technol. B10(6), American Vacuum Society, 1992, pp. 2804-2808.
“Mirror Electron Microscopy”, Advances in Imaging and Electron Physics, vol. 94. pp. 81-150.
LSI Testing Symposium/1999 Proceedings, p. 142.
Douglas Hendricks, Jack Jau, Hans Dohse, Alan Brodie and Dan Meisburger, “Characterization of a New Automated Electron-Beam Wafer Inspection System”, SPIE vol. 2439, pp. 174-183.
A. B. Bok, J.B, Le Poole, J. Roos and H. De Lang, “Mirror Electron Microscopy” in “Advances in Optical and Electron Microscopy”, vol. 4, Academic Press 1971, pp. 161-171.
M. Mankos , R.M. Tromp, M.C. Reuter and E. Cartier, “Imaging Hot-Electron Emission from Metal-Oxide-Semiconductor Structures,” Physical Review Letters, vol. 76, No. 17, Apr. 22, 1996, pp. 3200-3203.
R.M. Tromp, “Low-energy electron microscopy”, IBM J. Res. Develop., vol. 44, No. 4, Jul. 2000, pp. 503-516.
Anan Yoshihiro
Makino Hiroshi
Murakoshi Hisaya
Shinada Hiroyuki
Todokoro Hideo
A. Marquez, Esq. Juan Carlos
Hitachi High-Technologies Corporation
Johnston Phillip A
Stites & Harbison PLLC
LandOfFree
Apparatus and method for wafer pattern inspection does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus and method for wafer pattern inspection, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and method for wafer pattern inspection will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2718835