Apparatus and method for thin-layer metrology

Details Apparatus and method for thin-layer metrology Apparatus and method for thin-layer metrology

2008-03-25

2008-03-25

Toatley, Jr., Gregory J. (Department: 2877)

Optics: measuring and testing

Dimension

Thickness

C356S237400, C356S237500, C356S634000, C356S635000, C356S636000, C382S145000

Reexamination Certificate

active

10777162

ABSTRACT:
An apparatus (1) and a method for thin-layer metrology of semiconductor substrates (16) are disclosed. The semiconductor substrates (16) are delivered or transported to the apparatus (1) by means of at least one cassette element. A measurement unit (5) for thin-layer micrometrology is provided in the apparatus (1), the semiconductor substrates being conveyed by means of a transport mechanism (7) from the cassette element (3) to the measurement unit (5) for thin-layer micrometrology. A measurement unit (9) for thin-layer macrometrology is provided in the region of the transport mechanism (7) after the cassette element (3). By means of the measurement unit (9) for thin-layer macrometrology, measurement locations (22) on the semiconductor substrate that require more detailed examination in the measurement unit (5) for thin-layer micrometrology can rapidly be identified.

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