Apparatus and method for thin-layer metrology

Details Apparatus and method for thin-layer metrology Apparatus and method for thin-layer metrology

2008-03-25

2008-03-25

Toatley, Jr., Gregory J. (Department: 2877)

Optics: measuring and testing

Dimension

Thickness

C356S237400, C356S237500, C356S634000, C356S635000, C356S636000, C382S145000

Reexamination Certificate

active

07349106

ABSTRACT:
An apparatus (1) and a method for thin-layer metrology of semiconductor substrates (16) are disclosed. The semiconductor substrates (16) are delivered or transported to the apparatus (1) by means of at least one cassette element. A measurement unit (5) for thin-layer micrometrology is provided in the apparatus (1), the semiconductor substrates being conveyed by means of a transport mechanism (7) from the cassette element (3) to the measurement unit (5) for thin-layer micrometrology. A measurement unit (9) for thin-layer macrometrology is provided in the region of the transport mechanism (7) after the cassette element (3). By means of the measurement unit (9) for thin-layer macrometrology, measurement locations (22) on the semiconductor substrate that require more detailed examination in the measurement unit (5) for thin-layer micrometrology can rapidly be identified.

REFERENCES:
patent: 4618938 (1986-10-01), Sandland et al.
patent: 4764969 (1988-08-01), Ohtombe et al.
patent: 4917556 (1990-04-01), Stark et al.
patent: 6178257 (2001-01-01), Alumot et al.
patent: 6208751 (2001-03-01), Almogy
patent: 6241456 (2001-06-01), Kato et al.
patent: 6493082 (2002-12-01), Nara et al.
patent: 6919957 (2005-07-01), Nikoonahad et al.
patent: 7173693 (2007-02-01), Shibata et al.
patent: 2002/0051698 (2002-05-01), Birkner et al.
patent: 2002/0095999 (2002-07-01), Birkner et al.
patent: 2002/0176074 (2002-11-01), Hasan
patent: 2003/0140716 (2003-07-01), Birkner et al.
patent: 2004/0029333 (2004-02-01), Matsukawa
patent: 2005/0038554 (2005-02-01), Watkins
patent: 2005/0072945 (2005-04-01), Fukazawa et al.
patent: 100 53 232 (2002-05-01), None

Affiliated with

Also associated with

Rating

Apparatus and method for thin-layer metrology does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus and method for thin-layer metrology, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and method for thin-layer metrology will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2783826