Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1984-09-12
1987-03-17
Richman, Barry S.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156DIG64, 156DIG88, 156DIG97, 422249, C30B 1506
Patent
active
046505415
ABSTRACT:
Apparatus for continuously forming a silicon crystal sheet from a silicon rod in a noncrucible environment. The rod is rotated and fed toward an RF coil in an inert atmosphere so that the upper end of the rod becomes molten and the silicon sheet crystal is pulled therefrom substantially horizontally in a continuous strip. A shorting ring may be provided around the rod to limit the heating to the upper end only. Argon gas can be used to create the inert atmosphere within a suitable closed chamber. By use of this apparatus and method, a substantially defect-free silicon crystal sheet is formed that can be used for microcircuitry chips or solar cells.
REFERENCES:
patent: 4226834 (1980-10-01), Shudo et al.
patent: 4329195 (1982-05-01), Kudo
Bleil; A New Method for Growing Crystal Ribbons; J. of Crystal Growth, 5(1969) 99-104.
Kudo; Improvements in the Horizontal Growth Technique for Single Crystal Silicon; J. of Crystal Growth 50, pp. 247-259 (1980).
Jewett et al; Progress in Growth of Silicon Ribbon by a Low Angle, High Rate Process; 17th IEEE Photovoltaic Specialist Conference, IEEE Press, pp. 86-89 (1982).
Albrecht John M.
Gzybowski Michael S.
Hightower Judson R.
Richardson Kenneth L.
Richman Barry S.
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