Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
2006-02-21
2006-02-21
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C117S106000, C117S208000, C117S214000
Reexamination Certificate
active
07001456
ABSTRACT:
In supplying crystalline materials in the Czochralski method, it is made use of an apparatus equipped with an inner vessel having an opening portion at the lower part or bottom thereof, which is to be charged with a granular solid material, an outer vessel containing the inner vessel therein with the function of sliding movement and thus closing the opening portion, and pull-up means for suspending the inner vessel and outer vessel in a manner causing them to ascend or descend, wherein the opening portion is opened through a sliding motion of the inner vessel or outer vessel for additional charging or recharging of the solid material into the molten material in the crucible, with the result that the molten material in the crucible can be prevented from splashing, the additional charging can be carried out in a static manner, the material cost becomes low and there is no risk of cracking due to rapid heating. Further, the productivity in silicon single crystal growing can be improved, the crucible can be used efficiently and the life of the furnace parts can be prolonged and, as a result, the cost of silicon single crystal growing can be markedly reduced.
REFERENCES:
patent: 4036595 (1977-07-01), Lorenzini et al.
patent: 5488923 (1996-02-01), Imai et al.
patent: 5524571 (1996-06-01), Kawasaki et al.
patent: 5900055 (1999-05-01), Nagai et al.
patent: 6059876 (2000-05-01), Yin et al.
patent: 6805746 (2004-10-01), Moroishi et al.
patent: 6896732 (2005-05-01), Fickett et al.
patent: 2155806 (1995-10-01), None
patent: 09-208368 (1997-08-01), None
patent: 11-236290 (1999-08-01), None
Nakashima Katsunori
Yabusame Tatsuya
Yamanaka Fumio
Clark & Brody
Kunemund Robert
Sumitomo Mitsubishi Silicon Corporation
LandOfFree
Apparatus and method for supplying Crystalline materials in... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus and method for supplying Crystalline materials in..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and method for supplying Crystalline materials in... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3656349