Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2006-05-02
2006-05-02
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S596000, C438S592000
Reexamination Certificate
active
07037818
ABSTRACT:
A structure, apparatus and method for improving the performance of semiconductor devices is provided. The semiconductor structure includes a raised source/drain region above a planar source/drain. The raised source/drain has at least a first step and a second step with a variety of transitions therebetween. The first step is of a prescribed height configured to optimize performance of the semiconductor device and is arranged next to a gate. The first step has a top surface above a lower surface of the gate. The second step is arranged next to the first step and has an upper surface raised above the upper surface of the first step. The raised source/drain is configured to reduce resistance with a minimal increase of gate capacitance. The raised source/drain may be fabricated in one deposition step.
REFERENCES:
patent: 6465842 (2002-10-01), Nishinohara
patent: 6514843 (2003-02-01), Dokumaci et al.
patent: 6686637 (2004-02-01), Dokumaci et al.
patent: 6869866 (2005-03-01), Chidambarrao et al.
patent: 6872606 (2005-03-01), Chen et al.
patent: 2002/0063299 (2002-05-01), Kamata et al.
patent: 2003/0107104 (2003-06-01), Wu et al.
patent: 2003/0109105 (2003-06-01), Mehrotra et al.
Dokumaci Omer H.
Wang Xinlin
Zhu Huilong
Abate Esq. Joseph P.
Everhart Caridad
Greenblum & Bernstein P.L.C.
International Business Machines - Corporation
LandOfFree
Apparatus and method for staircase raised source/drain... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus and method for staircase raised source/drain..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and method for staircase raised source/drain... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3646431