Cleaning and liquid contact with solids – Processes – For metallic – siliceous – or calcareous basework – including...
Reexamination Certificate
2005-02-22
2005-02-22
Carrillo, Sharidan (Department: 1746)
Cleaning and liquid contact with solids
Processes
For metallic, siliceous, or calcareous basework, including...
C134S003000, C134S004000, C134S008000, C134S025400, C134S026000, C134S028000, C134S029000, C134S030000, C134S034000, C134S035000, C134S036000, C134S041000, C134S042000, C134S902000
Reexamination Certificate
active
06858089
ABSTRACT:
An improved method for removing contaminant particles from a surface of a semiconductor wafer includes forming a sacrificial film on the surface of the wafer and then removing the sacrificial film by supercritical fluid cleaning. The removal of the sacrificial film via the supercritical fluid cleaning process facilitates removing the contaminant particles. The method further includes identifying and characterizing the contaminant particles and creating a record of the contaminant particle data. The composition of the sacrificial film is selected based on the contaminant particles data and the supercritical cleaning recipe is selected based on the composition of the sacrificial film and the contaminant particles data.
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AKC Patent, LLC
Carrillo Sharidan
Collins Aliki K.
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