Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2007-04-17
2007-04-17
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S712000, C216S063000, C216S066000
Reexamination Certificate
active
11160667
ABSTRACT:
Apparatus for exposure and probing of features in a semiconductor workpiece includes a hollow concentrator for covering a portion of the workpiece connected by a gas conduit to a supply of etchant gas. A stage supports and positions the semiconductor workpiece. Control means moves the stage and the semiconductor workpiece to the series of positions sequentially. An energy beam source directs a focused energy beam through an aperture through the concentrator onto a region on the surface of the workpiece in the presence of the etchant gas. The control means moves the stage to a series of positions with respect to the concentrator and the energy beam to direct the energy beam in the presence of the etchant gas to expose a series of regions on the surface of the semiconductor workpiece positioned below the hollow interior space of the concentrator, sequentially.
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Deering Andrew
Kane Terence L.
Kaszuba Philip V.
Moszkowicz Leon
Scrudato Carmelo F.
International Business Machines - Corporation
Jones II Graham S.
Picardat Kevin M.
Schnurmann H. Daniel
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