Apparatus and method for repairing a semiconductor memory

Static information storage and retrieval – Read/write circuit – Bad bit

Reexamination Certificate

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C365S225700

Reexamination Certificate

active

07492652

ABSTRACT:
An apparatus and method for repairing a semiconductor memory device includes a first memory cell array, a first redundant cell array and a repair circuit configured to nonvolatilely store a first address designating at least one defective memory cell in the first memory cell array. A first volatile cache stores a first cached address corresponding to the first address designating the at least one defective memory cell. The repair circuit distributes the first address designating the at least one defective memory cell of the first memory cell array to the first volatile cache. Match circuitry substitutes at least one redundant memory cell from the first redundant cell array for the at least one defective memory cell in the first memory cell array when a first memory access corresponds to the first cached address.

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International Search Report for International Application No. PCT/US2006/023219, Nov. 17, 2006, 4 pages.

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