Apparatus and method for reading multi-level data stored in a se

Static information storage and retrieval – Systems using particular element – Semiconductive

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365168, G11C 1134

Patent

active

054576504

ABSTRACT:
A semiconductor memory includes memory cells, word lines, bit lines, a row decoder, column decoder, a voltage-changing circuit, a sense amplifier, and an output circuit. Each memory cell stores multi-level data. The row decoder selects one of the word lines in accordance with an address signal. The voltage-changing circuit generates different voltages, which are applied to the row decoder. The different voltages are sequentially applied from the voltage-changing circuit to the word line selected by the row decoder. The column decoder selects a bit line every time the potential of the word line changes. The sense amplifier detects the data read from the memory cell onto the bit line every time the potential of the word line changes. The output circuit converts the data to code data.

REFERENCES:
patent: 5132935 (1992-07-01), Ashmore
patent: 5172338 (1992-12-01), Mehrotra et al.
patent: 5218569 (1993-06-01), Banks
patent: 5293560 (1994-03-01), Harari
patent: 5335198 (1994-08-01), Van Buskirk

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