Apparatus and method for pulling single crystal

Details Apparatus and method for pulling single crystal Apparatus and method for pulling single crystal

2006-06-20

2006-06-20

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

C117S014000, C117S201000, C117S217000, C117S218000

Reexamination Certificate

active

07063743

ABSTRACT:
The present invention teaches an apparatus for pulling a single crystal, whereby a radial temperature gradient of a seed crystal and/or a neck is reduced to a minimum so as to inhibit occurrence of thermal stress and prevent induction of dislocations, thereby resulting in an improvement in dislocation-free rate of single crystals to be pulled in cases where a single crystal is pulled with a seed crystal and/or a neck being heated using an auxiliary heating device. The apparatus comprises a crucible to be charged with a melt, a heater located around the crucible, and an auxiliary heating device including a heating section which can be located so as to surround a seed crystal in a position near and above the melt, a transfer mechanism for withdrawing the heating section from a passing area of a single crystal, and a covering section to cover a clearance between the heating section and the seed crystal extending from the heating section.

REFERENCES:
patent: 5885344 (1999-03-01), Kim et al.
patent: 5997635 (1999-12-01), Kubota et al.
patent: 6117402 (2000-09-01), Kotooka et al.
patent: 6238477 (2001-05-01), von Ammon et al.

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