Apparatus and method for programming PMOS memory cells

Details Apparatus and method for programming PMOS memory cells Apparatus and method for programming PMOS memory cells

1997-10-09

1999-10-12

Dinh, Son T.

Static information storage and retrieval

Floating gate

Particular biasing

36518519, 36518524, G11C 1604

Patent

active

059663294

ABSTRACT:
A program voltage of a first level is applied to the control gate of a PMOS floating gate memory cell to realize an injection of hot electrons induced by band-to-band tunneling (BTBT) into the floating gate of the cell. As the threshold voltage of the cell increases due to the accumulation of charge on the floating gate, the injection of BTBT induced hot electrons subsides. The program voltage is reduced to a second level which induces the injection of channel hot electrons (CHE) into the floating gate, thereby boosting the rate of charge accumulation on the floating gate.

REFERENCES:
Ohnakado, T., et al., "Novel Electron Injection Method Using Band-to-Band Tunneling Induced Hot Electron (BBHE) for Flash Memory with a P-Channel Cell", IEEE pp. 279-282 (1995).

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