Apparatus and method for producing silicon single crystal

Details Apparatus and method for producing silicon single crystal Apparatus and method for producing silicon single crystal

1990-07-19

1992-10-06

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566181, 1566204, 156DIG64, 422249, C30B 1500

Patent

active

051528673

ABSTRACT:
An apparatus and a method for producing a silicon single crystal by the Czochralski method, whereby the silicon single crystal is pulled up from a crucible while the crucible is heated by a side heater in the lateral periphery of the crucible and a bottom heater facing the bottom of the crucible. The outputs of the side heater and bottom heater are controlled independently of each other so that an oxygen concentration in the pull-up direction of the pulled-up silicon single crystal is rendered uniform. In addition to the output control of the heaters, a magnetic field is applied to a molten liquid in the crucible, so that, a dopant concentration in a radial direction of the pulled-up silicon single crystal is rendered uniform.

REFERENCES:
patent: 4235848 (1980-11-01), Sokolov et al.
patent: 4350557 (1982-09-01), Scholl et al.
patent: 4609425 (1986-09-01), Mateika et al.
"CZ Silicon Crystals Grown In A Traverse Magnetic Field"; Suzuki et al.; Sony Corp, Semiconductor Div.; Electrochem Society (Eng.) 1981.
"Czochralski Silicon Crystals Grown In A Traverse Magnetic Field"; Suzuki et al.; Sony Corp., Semiconductor Div., Japan 243, pp. 90-100.
"Low Oxygen Content Czochralski Silicon Crystal Growth"; Hoshikawa et al.; Japanese Journal of Applied Physics; vol. 19, No. 1, Jan., 1980, pp. L33-L36.
"The Dissolution Rate of Silica in Molten Silicon", Hiroshi Hirata et al., Jpn. J. Appl. Phys., vol. 19, No. 8, 1980.

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