Coating apparatus – Gas or vapor deposition – With treating means
Patent
1997-09-30
2000-12-19
Mills, Gregory
Coating apparatus
Gas or vapor deposition
With treating means
118723E, 118725, 118724, 118723I, C23C 1601
Patent
active
061615005
ABSTRACT:
A method and apparatus for depositing a film by chemical vapor deposition comprises a showerhead for dispersing reactant gases into the processing space wherein the showerhead has a first space therein operable for receiving and dispersing the first reacting gas, and has a second space therein, generally isolated from the first space, and operable for receiving and dispersing the second reactant gas separate from the first gas dispersion for maintaining segregation of reactant gases and generally preventing premature mixture of the gases prior to their introduction into the processing space to prevent premature deposition in the system.
REFERENCES:
patent: 4078167 (1978-03-01), Bana et al.
patent: 4728528 (1988-03-01), Ishihara et al.
patent: 4759947 (1988-07-01), Ishihara et al.
patent: 4778692 (1988-10-01), Ishihara et al.
patent: 4784874 (1988-11-01), Ishihara et al.
patent: 4792378 (1988-12-01), Rose et al.
patent: 4798165 (1989-01-01), deBoer et al.
patent: 4801468 (1989-01-01), Ishihara et al.
patent: 4818563 (1989-04-01), Ishihara et al.
patent: 4853251 (1989-08-01), Ishihara et al.
patent: 4897709 (1990-01-01), Yokoyama et al.
patent: 4898118 (1990-02-01), Murakami et al.
patent: 4908329 (1990-03-01), Kanai et al.
patent: 4908330 (1990-03-01), Arai et al.
patent: 4979465 (1990-12-01), Yoshino et al.
patent: 4987856 (1991-01-01), Hey et al.
patent: 4998503 (1991-03-01), Murakami et al.
patent: 5010842 (1991-04-01), Oda et al.
patent: 5018479 (1991-05-01), Markunas et al.
patent: 5052339 (1991-10-01), Vakerlis et al.
patent: 5061511 (1991-10-01), Saitoh et al.
patent: 5173327 (1992-12-01), Sandhu et al.
patent: 5178905 (1993-01-01), Kanai et al.
patent: 5180435 (1993-01-01), Markunas et al.
patent: 5238499 (1993-08-01), Van De Ven et al.
patent: 5268034 (1993-12-01), Vukelic
patent: 5273588 (1993-12-01), Foster et al.
patent: 5342471 (1994-08-01), Fukasawa et al.
patent: 5356476 (1994-10-01), Foster et al.
patent: 5370739 (1994-12-01), Foster et al.
patent: 5433787 (1995-07-01), Suzuki et al.
patent: 5434110 (1995-07-01), Foster et al.
patent: 5453124 (1995-09-01), Moslehi et al.
patent: 5480678 (1996-01-01), Rudolph et al.
patent: 5595606 (1997-01-01), Fujikawa et al.
patent: 5628829 (1997-05-01), Foster et al.
Shackelford, J.F., "Introduction to Materials Science for Engineers", 3rd Ed. MacMillian, Jan. 1992.
Remery, K.P. et al., Numerical Simulations of the MRC Single-Wafer (PE)CVD Reaction for Ti and TiN Deposition: Phase 2: Parametric Study of the New Reactor Geometry with Multi-Point Injection, Kramers Laboratorium voor Fysische Technologie, Aug. 22, 1996, no page numbers.
Ameen Michael S.
Foster Robert F.
Hillman Joseph Todd
Kopacz Stanislaw
LeBlanc Rene Emile
Mills Gregory
Tokyo Electron Limited
Zervigon Rudy
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