Apparatus and method for polish removing a precise amount of mat

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451 11, 451 41, 451285, 451288, 438691, 438692, B24B 100, H01L 2100

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058656669

ABSTRACT:
An apparatus and method are presented for polishing removal of a select amount of material from a surface of a semiconductor wafer. The apparatus includes a polishing pad having a moveable planar polishing surface. The surface of the semiconductor wafer and a surface of at least one sacrificial member are retained against the polishing surface. A measurement system determines an amount of material removed from the surface of the sacrificial member. The measurement system includes a sensor unit for each sacrificial member coupled to a computational device. Each sensor unit is used to determine the amount of material remaining at the surface of the corresponding sacrificial member. The computational device determines the amount of material removed from the surface of each sacrificial member based upon the amount of material remaining at the surface. The amount of material removed from the surface of the sacrificial member corresponds to an amount of material removed from the surface of the semiconductor wafer. The computational device uses a correlation between the material removal rates due to polishing (i.e., polish rates) of the sacrificial member and the material upon the surface of the semiconductor wafer to determine when a desired amount of material has been removed from the surface of the semiconductor wafer.

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