Apparatus and method for plasma-assisted etching of wafers

Details Apparatus and method for plasma-assisted etching of wafers Apparatus and method for plasma-assisted etching of wafers

1983-03-04

1984-01-24

Demers, Arthur P.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

156345, 156643, 204298, C23C 1500

Patent

active

044275161

ABSTRACT:
In a plasma-assisted etching apparatus and method designed to pattern silicon dioxide in a plasma derived from a mixture of trifluoromethane and ammonia, surfaces in the reaction chamber are coated with a layer of silicon. Contamination of wafers during the etching process is thereby substantially reduced. In practice, this leads to a significant increase in the yield of acceptable chips per wafer.

REFERENCES:
patent: 4022928 (1977-05-01), Piwcyzk
patent: 4268374 (1981-05-01), Lepselter
patent: 4298443 (1981-11-01), Maydan

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