Apparatus and method for plasma-assisted etching

Details Apparatus and method for plasma-assisted etching Apparatus and method for plasma-assisted etching

1988-06-21

1989-07-18

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 156646, B44C 122, C03C 1500, C03C 2506

Patent

active

048490687

ABSTRACT:
An apparatus for reactive ion etching or plasma etching wherein the wafer faces downward. The process gas is supplied through a distributor which is below the wafer and has orifices pointing away from the wafer. The vacuum (exhaust) port is below the distributor, so that there is no bulk gas flow near the face of the wafer. Preferably transport of the process gasses and their products to the face of the wafer is dominated by diffusion.

REFERENCES:
patent: 4230515 (1980-10-01), Zajac
patent: 4307283 (1981-12-01), Zajac
patent: 4685999 (1987-08-01), Davis et al.

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